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Highly digital 1 GS/s 7‐bit PWM ADC in 65 nm CMOS using time‐domain quantisation
Author(s) -
Saha A.,
Harjani R.
Publication year - 2018
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2018.5393
Subject(s) - cmos , successive approximation adc , bit (key) , electronic engineering , time domain , computer science , pulse width modulation , physics , electrical engineering , engineering , voltage , capacitor , computer vision , computer security
A 2 × time‐interleaved 1 GS/s 7b ADC is presented, which uses pulse‐width modulation and time domain quantisation for digitisation and is designed for wide channel bandwidths available at mm‐wave frequencies. The area, resolution and power performance of the highly digital time‐domain architecture is likely to scale with technology. The prototype ADC achieves 5.24 ENOB at a Nyquist rate while consuming 5.22 mW of power, resulting in a FOMWalden , nyq= 138.13 fJ/conversion step in TSMC's 65 nm GP CMOS process.

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