Open AccessFour‐bit W‐band switched line phase shifter in 90 nm SiGe
Author(s) -
Chieh J.C.S.,
Rowland J.,
Sharma S.
Publication year - 2018
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2018.5380
Subject(s) - phase shift module , pin diode , diode , bicmos , electrical engineering , materials science , line (geometry) , chip , 4 bit , phase (matter) , electronic engineering , optoelectronics , insertion loss , engineering , physics , transistor , cmos , mathematics , voltage , geometry , quantum mechanics
A switched delay line phase shifter implemented in a 90 nm SiGe BiCMOS process utilising PIN diodes is presented. The 4‐bit phase shifter utilises four SP4T switches for a simplified architecture. The frequency of operation is from 75 to 100 GHz, and the simulated input referred P1dB is 28.5 dBm. This type of phase shifter is especially suitable for high power transmit linear phased arrays. The chip occupies an area of 2.76 mm 2 including the pads.