Open AccessIntegrate‐and‐fire spiking neuron circuit exhibiting spike‐triggered adaptation through input current modulation with back gate effect
Author(s) -
Kim T.,
Oh M.H.,
Kwon M.W.,
Park B.G.
Publication year - 2018
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2018.5047
Subject(s) - modulation (music) , leakage (economics) , electronic circuit , electrical engineering , voltage , mosfet , capacitor , computer science , electronic engineering , materials science , engineering , physics , transistor , acoustics , economics , macroeconomics
The authors present a spike‐triggered adaptive neuron circuit with input current modulation. Unlike adaptive neuron circuits where adaptation is realised by leakage modulation, the circuit presented in this Letter modulates the input current to membrane capacitor. Therefore, it is possible to reduce extra power consumption originating from increased leakage. Threshold voltage modulation of silicon on insulator (SOI) MOSFET by back gate effect is used to change the amount of injected current for the same input voltage. Through this method, the circuit in this work consumed 25.9% less power than the one modulating leakage.