Open Access185–220 GHz wideband amplifier in 40 nm CMOS
Author(s) -
Liu Yibo,
Mao Luhong,
Chi Baoyong
Publication year - 2018
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2018.1135
Subject(s) - wideband , amplifier , direct coupled amplifier , cmos , electrical engineering , bandwidth (computing) , fully differential amplifier , cascade amplifier , rf power amplifier , materials science , electronic engineering , physics , engineering , operational amplifier , telecommunications
A 185–220 GHz four‐stage differential wideband amplifier is presented. The bandwidth (BW) is significantly expended by using the coupled transmission line (CTL) technique and the staggered inter‐stage wideband matching technique. CTL is adopted due to its high self‐resonant frequency, high simulation accuracy, compact layout and wide BW characteristics. The amplifier achieves a peak gain of 10.1 and 3 dB BW of 35 GHz ranging from 185 to 220 GHz. With a supply voltage of 0.9 V, the amplifier consumes a DC power of 54.5 mW. The amplifier occupies a core area of 500 × 250 μm 2 in 40 nm CMOS.