
450 × 580 µm 2 Pixel incorporating TX and coherent RX in CMOS for mm‐wave active imaging using a single reflector
Author(s) -
Choi W.,
Byreddy P.R.,
Chen Z.,
Chen A.J.,
Newman A.J.,
O K.K.
Publication year - 2018
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2018.1086
Subject(s) - pixel , cmos , transmitter , dbm , physics , optics , bandwidth (computing) , reflector (photography) , transceiver , sensitivity (control systems) , dot pitch , electrical engineering , optoelectronics , telecommunications , engineering , electronic engineering , light source , amplifier , channel (broadcasting)
A transceiver pixel for active imaging incorporating a transmitter (TX) and a coherent receiver (RX) is demonstrated in 65 nm CMOS at 260 GHz. The pixel occupies an area of 450 × 580µm 2 and is the first demonstration of pixels incorporating a TX and a coherent RX which are smaller than λ /2 × λ /2. The pixel exhibits −21.3 dBm total radiated power and −79.5 dBm sensitivity at a 1 kHz noise bandwidth. This sensitivity is about 10 dB better than the state‐of‐the‐art pixel with only a coherent RX. The pixel consumes 18.7 mW of DC power.