Open AccessEnhancing performance of a InGaP/GaAs VCO by means of a switching architecture
Author(s) -
Pantoli L.,
Arena S.,
Cavanna T.
Publication year - 2018
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2018.0965
Subject(s) - voltage controlled oscillator , phase noise , heterojunction bipolar transistor , monolithic microwave integrated circuit , dbc , materials science , microwave , linearity , optoelectronics , electrical engineering , transistor , chip , bipolar junction transistor , electronic engineering , voltage , cmos , engineering , telecommunications , amplifier
The introduction of a compact switching architecture in the design of a monolithic microwave integrated voltage‐controlled oscillator (VCO) is described, that is able to provide enhanced characteristics in term of both linearity and tunability. The proposed solution is applied to the design of a C‐band GaAs MMIC (monolithic microwave integrated circuit) VCO. The chip has been realised with the heterojunction bipolar transistor (HBT) HB20M technology process provided by UMS Foundry. Measurements show a relative tuning range of about 30%, an average sensitivity of about 83 MHz/V, a minimum output power of 11.4 dBm and a phase noise at 100 kHz of frequency offset from the carrier lower of −107 dBc/Hz.