Capacitor‐reused CMOS temperature sensor with duty‐cycle‐modulated output and 0.38°C ( 3 σ ) inaccuracy

A new bipolar junction transistor‐based temperature sensor with duty‐cycle‐modulated output is presented. By employing a capacitor‐reused voltage to the duty‐cycle converter, the proposed design achieves both area and energy efficiencies simultaneously. The self‐controlled chopping, dynamic element matching and digital‐assisted calibration techniques are applied as well to further improve the accuracy. Fabricated in a standard 0.13 μm CMOS process, the proposed sensor achieves the measured 3 σ inaccuracy of 0.38 ∘ C from − 10 to 100 ∘ C after one‐point calibration while occupying a silicon area of 0.073 mm 2 .