Open AccessHigh‐speed FP GaN HEMT with f T /f MAX of 95/200 GHz
Author(s) -
Moon J.S.,
Grabar R.,
Antcliffe M.,
Fung H.,
Tang Y.,
Tai H.
Publication year - 2018
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2018.0417
Subject(s) - ohmic contact , materials science , gallium nitride , high electron mobility transistor , oscillation (cell signaling) , optoelectronics , scaling , transistor , capacitance , parasitic extraction , cutoff frequency , electrical engineering , physics , voltage , layer (electronics) , electrode , nanotechnology , chemistry , mathematics , biochemistry , geometry , engineering , quantum mechanics
Highly scaled 90 nm gate‐length field‐plated (FP) aluminium gallium nitride (GaN)/GaN high electron mobility transistors (HEMTs) with a record current gain cut‐off frequency ( f T ) of 95 GHz and maximum oscillation frequency ( f MAX ) of 200 GHz is reported. Both lateral scaling of source‐to‐drain distance to 1 μm and vertical scaling of gate‐to‐channel depth to 90 nm, along with n + ‐GaN ohmic contact, were utilised to minimise the parasitics, and the gate‐length scaling of FP GaN HEMTs down to 90 nm gate length was demonstrated with a record speed performance for the first time. The small‐signal model predicts that the f T is still dominated by the gate‐to‐source capacitance, implying that the speed performance of FP GaN HEMTs can further improve.