Highly sensitive resonant pressure sensor based on mode‐localisation effect | Zendy

Hu Zongda | Zendy; Zhao Qi | Zendy

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Highly sensitive resonant pressure sensor based on mode‐localisation effect

Author(s) -

Hu Zongda,

Zhao Qi

Publication year - 2018

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

ISSN - 1350-911X

DOI - 10.1049/el.2018.0353

Subject(s) - pressure sensor , materials science , acoustics , sensitivity (control systems) , mode (computer interface) , optoelectronics , electronic engineering , computer science , physics , engineering , thermodynamics , operating system

A novel micro‐silicon resonant pressure sensor with two mechanically coupled resonators is presented. When pressure acts on the diaphragm, the perturbed stress will cause stiffness perturbation, leading to mode‐localisation phenomenon. Therefore, pressure can be sensed by measuring the amplitude ratio shift. This novel structure is achieved by fabrication on silicon‐on‐insulator wafer. The measured result shows that the relative amplitude ratio shift (86,819.9 ppm/kPA) is 197.5 times higher than the shift in resonance frequency (439.6 ppm/kPA).

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