Open AccessHighly sensitive resonant pressure sensor based on mode‐localisation effect
Author(s) -
Hu Zongda,
Zhao Qi
Publication year - 2018
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2018.0353
Subject(s) - wafer , pressure sensor , resonator , materials science , silicon , fabrication , silicon on insulator , amplitude , stiffness , optoelectronics , resonance (particle physics) , diaphragm (acoustics) , microelectromechanical systems , pressure measurement , acoustics , optics , vibration , physics , composite material , atomic physics , medicine , alternative medicine , pathology , meteorology , thermodynamics
A novel micro‐silicon resonant pressure sensor with two mechanically coupled resonators is presented. When pressure acts on the diaphragm, the perturbed stress will cause stiffness perturbation, leading to mode‐localisation phenomenon. Therefore, pressure can be sensed by measuring the amplitude ratio shift. This novel structure is achieved by fabrication on silicon‐on‐insulator wafer. The measured result shows that the relative amplitude ratio shift (86,819.9 ppm/kPA) is 197.5 times higher than the shift in resonance frequency (439.6 ppm/kPA).