Open AccessHigh‐speed mobile memory I/O interface using multi‐modulation signalling
Author(s) -
Yu Y.,
Byun G.S.
Publication year - 2018
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2017.4685
Subject(s) - baseband , transceiver , chip , pulse amplitude modulation , modulation (music) , cmos , electronic engineering , amplitude shift keying , interface (matter) , data transmission , computer science , quadrature amplitude modulation , keying , electrical engineering , voltage , computer hardware , engineering , physics , bit error rate , phase shift keying , pulse (music) , channel (broadcasting) , bubble , maximum bubble pressure method , parallel computing , acoustics
The proposed multi‐band multi‐modulation I/O (MMI) for mobile memory interface consists of two RF‐band and 4‐PAM (pulse‐amplitude modulation) transceivers for simultaneous bidirectional read/write operations on a shared single‐ended 5 cm off‐chip transmission line. A novel band‐selective transformer is introduced to combine and split two amplitude shift keying modulated RF‐bands with a 4‐PAM baseband for transmitting and receiving multiple data concurrently. The MMI interface consumes 2.8 pJ/b from a 1.2 V supply voltage. Testing results show that the MMI interface achieves an overall data rate of 14 Gb/s/pin. It is implemented in a 65 nm CMOS process with chip area of 0.25 mm 2 .