Open Access490 fs pulse generation from passively mode‐locked single section quantum dot laser directly grown on on‐axis GaP/Si
Author(s) -
Liu S.,
Jung D.,
Norman J. C.,
Kennedy M. J.,
Gossard A. C.,
Bowers J. E.
Publication year - 2018
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2017.4639
Subject(s) - laser , optoelectronics , materials science , quantum dot laser , femtosecond , photonics , quantum dot , biasing , optics , continuous wave , silicon , semiconductor laser theory , voltage , semiconductor , physics , quantum mechanics
We demonstrate, for the first time, a single section passively mode‐locked InAs/InGaAs quantum dot laser directly grown on on‐axis (001) GaP/Si substrate. The laser has a continuous‐wave threshold current of 34 mA at 20°C. By forward biasing the laser gain section current at 470 mA, 490 fs pulse generation with 31 GHz repetition rate can be obtained. This simple femtosecond pulse generation structure with CMOS fabrication compatibility makes the laser a promising light source candidate in future large‐scale silicon photonic applications.