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Ultra‐low‐LO‐power X‐band down‐conversion ring mixer using weak‐inversion biasing technique
Author(s) -
Tsai J.H.,
Xiao H.,
Cheng J.H.,
Chang R.A.
Publication year - 2018
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2017.4120
Subject(s) - biasing , inversion (geology) , materials science , optoelectronics , physics , electrical engineering , voltage , engineering , paleontology , structural basin , biology
An ultra‐low‐LO (local oscillator)‐power X‐band down‐conversion ring mixer in 0.18‐μm CMOS process is presented. By using the weak‐inversion biasing technique, the proposed X‐band ring mixer exhibits low‐dc‐power consumption and low‐LO‐drive power while maintaining a reasonable conversion gain (CG). The measurement results show that the proposed mixer demonstrates a maximum CG of 1.75 dB with ultra‐low‐LO‐power of −8 dBm at RF of 12 GHz and IF of 100 MHz. The dc power is only 2 mW. The 3‐dB RF bandwidth is from 9 to 15 GHz and the output 1‐dB compression point (OP 1 dB ) is −14 dBm.

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