Open AccessGaN‐based FinFET with double‐channel AlGaN/GaN heterostructure
Author(s) -
Wang Chong,
Wang Xin,
Zheng Xuefeng,
He Qing,
Wu Ji,
Tian Ye,
Mao Wei,
Ma Xiaohua,
Hao Yue
Publication year - 2018
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2017.3934
Subject(s) - materials science , heterojunction , optoelectronics , channel (broadcasting) , gallium nitride , wide bandgap semiconductor , electronic engineering , electrical engineering , layer (electronics) , nanotechnology , engineering
GaN‐based FinFET with double‐channel AlGaN/GaN heterostructure is proposed. The current and transconductance characteristics of the device are simulated by Sentaurus software. The simulation results show that the GaN‐based FinFET with double channel has higher saturation current and better linearity. The application of double‐channel structure improves the saturation current and the control ability of the gate with the aid of triple gate. The combination of FinFET and double channel presents a novel structure for high‐performance device. Furthermore, the enhancement‐mode device can also be obtained by optimising the Fin width of the device.