Open AccessOn‐chip data strobe transmission with short‐circuit current protection scheme for dynamic random access memory
Author(s) -
Lee WonYoung,
Jung ChaeYoung
Publication year - 2018
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2017.3634
Subject(s) - dram , dynamic random access memory , chip , cmos , node (physics) , electronic engineering , computer science , transmission (telecommunications) , data retention , electrical engineering , engineering , computer hardware , semiconductor memory , structural engineering
This Letter proposes an on‐chip data strobe transmission circuit for dynamic random access memory (DRAM). The on‐chip differential repeaters with cross‐coupled latches are adopted to prevent the sampling margin reduction. A node monitoring circuit has been proposed to prevent short‐circuit currents of the on‐chip differential repeaters and cross‐coupled latches caused by high impedance inputs. When compared with the conventional differential signalling, the proposed circuit can save the short‐circuit current of 6.2 mA per a single write operation. The chip has been fabricated in 350 nm CMOS technology and the active chip area is 0.189 mm 2 .