Open AccessInvestigating effect of temperature on barrier height of PWB diodes
Author(s) -
Akura M.,
Dunn G.M.
Publication year - 2018
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2017.3353
Subject(s) - diode , gallium arsenide , materials science , optoelectronics , silicon , atmospheric temperature range , doping , planar , rectangular potential barrier , electric field , physics , computer graphics (images) , quantum mechanics , meteorology , computer science
The effect of temperature on the barrier height of a gallium arsenide (GaAs)/aluminium GaAs (AlGaAs) potential‐well barrier (PWB) diodes is investigated and reported in this Letter. It was found that more electrons diffuse from the doped AlGaAs(silicon) into the undoped layers with increasing temperature, this modifies the electric field along these layers and hence the barrier height. The barrier height increases with increasing temperature at an increasing rate of 0.093 – 0.36meV / K in the temperature range of 200–380 K in a similar way to the planar‐doped barrier (PDB) diode. The result of the computer simulations, however, shows that the PWB diode is less sensitive than the PDB diode due to the active nature of the charge in the well.