Open Access4H‐SiC trench MOSFET with integrated fast recovery MPS diode
Author(s) -
Dai Tianxiang,
Chan Chun Wa,
Deng Xc,
Jiang Huaping,
Gammon Peter M.,
Jennings Mike R.,
Mawby Phil A.
Publication year - 2018
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2017.3198
Subject(s) - schottky diode , trench , materials science , optoelectronics , mosfet , schottky barrier , diode , metal–semiconductor junction , reverse leakage current , silicon carbide , transistor , step recovery diode , electronic engineering , electrical engineering , engineering , voltage , nanotechnology , layer (electronics) , metallurgy
A 4H‐SiC trench metal–oxide–semiconductor field‐effect‐transistor (MOSFET) design with an integrated merged PiN Schottky (MPS) diode is proposed. The Schottky contact is embedded on the bottom of the trench structure for the first time. The low electric field in the oxide and Schottky contact surface can be achieved simultaneously using the proposed integration design which enhances the oxide reliability and reduces leakage from the Schottky diode. The integration of the MPS diode reduces the total chip area and the required number of dies compared with the conventional method of using an external Schottky diode.