Open AccessOn the impact of current generation commercial gallium nitride power transistors on power converter loss
Author(s) -
Petersen A.,
Stone D.A.,
Foster M.P.
Publication year - 2017
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2017.3183
Subject(s) - converters , gallium nitride , power (physics) , electronic engineering , power semiconductor device , transistor , power loss , materials science , electrical engineering , computer science , engineering , voltage , physics , nanotechnology , layer (electronics) , quantum mechanics
The enormous potential benefits of gallium nitride based power switching devices, only commercially available very recently, in terms of power switching device loss are highlighted. This is first demonstrated through a simulated prediction of loss in multilevel converters, followed by experimental validation. While the simulations focus on losses in multilevel converters, the observations made are relevant in a broad range of applications.