Demonstration of fully vertical GaN‐on‐Si Schottky diode

The realisation of a fully vertical gallium nitride (GaN)‐on‐silicon (Si) Schottky barrier diode (SBD) without using wafer bonding and Si substrate removal process is reported. The SBD presented a turn‐on voltage of 0.69 V at 1 A/cm 2 , breakdown voltage of 148 V with a specific on‐resistance of 13.9 mΩ cm 2 . The ideality factor and Schottky barrier height were 1.35 and 0.71 eV, respectively. An effective critical electric field was estimated to be 1.48 MV/cm. The Baliga's figure of merit for the SBD was calculated to be 1.57 MW/cm 2 . These results indicate the great potential of GaN‐on‐Si in achieving cost‐effective fully vertical power device.