QD floating gate NVRAM using QD channel for faster erasing | Zendy

Lingalugari M. | Zendy; Chan P.Y. | Zendy; Heller E.K. | Zendy; Chandy J. | Zendy; Jain F.C. | Zendy

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QD floating gate NVRAM using QD channel for faster erasing

Author(s) -

Lingalugari M.,

Chan P.Y.,

Heller E.K.,

Chandy J.,

Jain F.C.

Publication year - 2018

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

eISSN - 1350-911X

pISSN - 0013-5194

DOI - 10.1049/el.2017.2931

Subject(s) - non volatile random access memory , materials science , optoelectronics , computer science , non volatile memory , channel (broadcasting) , electronic engineering , electrical engineering , computer hardware , computer network , semiconductor memory , engineering , memory refresh , computer memory

A new pathway to design floating gate quantum dot (QD) non‐volatile RAM (QDNVRAM) cells that possess high‐speed low‐voltage Erase capabilities not possible with conventional floating gate NV memories is presented. This is achieved by directly accessing the QD floating gate layer with an additional drain (D2) during the Erase operation. Experimental data on fabricated long‐channel (10 μm/14 μm) QDNVRAM cell shows ‘Erase’ pulse duration of ∼4 μs at voltage of about 10 V using drain D2 which is over two‐order smaller than the ‘Write’ pulse value. Quantum mechanical simulations are also presented. QDNVRAM fabrication process is compatible with CMOS processing.

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