Open AccessBias non‐conservation characteristics of drain current noise of 40 nm n‐MOSFETs in high‐frequency band
Author(s) -
Wang Jun
Publication year - 2017
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2017.2887
Subject(s) - shot noise , noise (video) , flicker noise , materials science , mosfet , infrasound , optoelectronics , range (aeronautics) , biasing , voltage , physics , electrical engineering , noise figure , acoustics , optics , engineering , cmos , transistor , computer science , amplifier , composite material , artificial intelligence , detector , image (mathematics)
The behaviours of drain current noise of 40 nm n‐MOSFETs are distinguished by comparing with 120 nm n‐MOSFETs over an extended range of bias voltages and temperature. The measurement results strongly indicate that the high‐frequency noise mechanism of 40 nm n‐MOSFETs is changed from suppressed shot noise to thermal noise on conditions of low‐voltage weak interaction.