Open AccessDesign of highly efficient broadband harmonic‐optimised GaN power amplifier via modified simplified real frequency technique
Author(s) -
Hu Xingwei,
Meng Xiangyu,
Yu Cuiping,
Liu Yuanan
Publication year - 2017
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2017.2849
Subject(s) - amplifier , electronic engineering , broadband , gallium nitride , dbc , transistor , adjacent channel , bandwidth (computing) , materials science , load pull , high electron mobility transistor , harmonic , extremely high frequency , electrical engineering , engineering , acoustics , telecommunications , physics , voltage , phase noise , cmos , layer (electronics) , composite material
A design of broadband power amplifier (PA) which uses harmonic‐optimised matching network (MN) is designed to maintain high efficiency. The load–pull data is used to construct the optimal impedance areas in fundamental and harmonic parts. Then, the modified simplified real frequency technique algorithm is employed to design output‐MN through constructing the defined harmonic‐error functions. A 10 W Cree gallium nitride high‐electron‐mobility transistor device CGH40010F is used to validate this method. The proposed PA has a 40% bandwidth (1.8–2.7 GHz) and a 64–81% drain efficiency. The digital pre‐distortion process shows the adjacent channel leakage ratio (ACLR) is <−52 dBc at 2.25 GHz.