Open AccessTransverse mode confinement in lithographic VCSELs
Author(s) -
Deppe D.G.,
Leshin J.,
Leshin J.,
Eifert L.,
Tucker F.,
Hillyer T.
Publication year - 2017
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2017.2780
Subject(s) - lithography , materials science , transverse plane , mode (computer interface) , optoelectronics , optics , transverse mode , laser , physics , engineering , computer science , structural engineering , operating system
Index confinement is studied experimentally and through modelling for lithographic vertical‐cavity surface‐emitting lasers (VCSELs) and contrasted with other types of VCSELs. Modelling shows that the index confinement is set by the height of a shallow internal mesa that produces the optical mode confinement. Overgrowth with a semiconductor mirror enables a range of index confinement from zero (no index guiding) similar to proton‐implanted VCSELs to much higher confinement than viable for oxide VCSELs. Lasing spectra are studied for side‐mode‐suppression ratio and beam patterns are compared for high and low indexes confined VCSELs of different sizes.