Open AccessSub‐sampling of RF and THz waves using LT‐GaAs photoconductors under 1550 nm light excitation
Author(s) -
Billet M.,
Desmet Y.,
Bavedila F.,
Barbieri S.,
Hänsel W.,
Holzwarth R.,
Ducournau G.,
Lampin J.F.,
Peytavit E.
Publication year - 2017
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2017.2769
Subject(s) - terahertz radiation , materials science , optoelectronics , gallium arsenide , duty cycle , laser , excitation , optics , physics , voltage , quantum mechanics
Low‐temperature‐grown GaAs (LT‐GaAs)‐based Fabry–Pérot cavity photoconductors, designed for RF and THz optoelectronics applications using1550 nm lasers, are studied. The sub‐sampling of continuous waves at frequencies up to 300 GHz is presented. The duty‐cycle‐limited conversion losses measured up to 67 GHz show that this GaAs‐based photoconductor behaves as a nearly perfect photoswitch controlled by a 1550 nm pulsed laser.