Open AccessA Novel approach to fabricate self‐aligned graphene transistor
Author(s) -
Zeng Rongzhou,
Li Ping,
Li Junhong,
Liao Yongbo,
Zhang Qingwei,
Xie Xiaodong
Publication year - 2017
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2017.2702
Subject(s) - materials science , graphene , etching (microfabrication) , transistor , fabrication , optoelectronics , layer (electronics) , electrode , metal gate , field effect transistor , nanotechnology , contact resistance , electrical engineering , gate oxide , engineering , physics , voltage , medicine , alternative medicine , pathology , quantum mechanics
An innovated simple fabrication process is adopted to fabricate a novel gate self‐aligned (GSA) graphene field effect transistor (GFET). First, stacked source/drain electrodes with triple‐layer metal are formed. Then, after slightly etching of the second metal layer, laterally recessed profiles are formed, which leads to the self‐aligned (SA) gate. A noticeable feature of the GSA‐GFET is that the access resistance is not changed with the level of the lateral recessing, which leads to a very small access resistance. Compared with the non‐SA‐GFET with same gate length and width, the contact resistance of the GSA‐GFET is reduced by 68%, the peak g m is 3.6 times improved, the on/off ratio is increased from 1.8 to 3.2.