Open AccessDBR‐free semiconductor disc laser on SiC heatspreader emitting 10.1 W at 1007 nm
Author(s) -
Mirkhanov S.,
Quarterman A.H.,
Kahle H.,
Bek R.,
Pecoroni R.,
Smyth C.J.C.,
Vollmer S.,
Swift S.,
Michler P.,
Jetter M.,
Wilcox K.G.
Publication year - 2017
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2017.2689
Subject(s) - materials science , laser , optics , distributed bragg reflector , optoelectronics , semiconductor laser theory , semiconductor , active laser medium , wavelength , silicon carbide , resonator , birefringence , laser power scaling , physics , metallurgy
We report a distributed Bragg reflector‐free semiconductor disc laser which emits 10 W continuous wave output power at a wavelength of 1007 nm when pumped with 40 W at 808 nm, focused into a 230 μm diameter spot on the gain chip. By introducing a birefringent filter plate in the laser cavity the wavelength could be tuned from 995 to 1020 nm. The laser consisted of a gain chip located at the beam waist of a linear concentric resonator with an output coupling of 2.15%. The gain chip consists of a 1.574‐μm‐thick resonant periodic gain structure, with ten In 0.13 Ga 0.87 As quantum wells embedded in strain‐compensating GaAs 0.94 P 0.06 barrier layers, van der Waals bonded to a silicon carbide intra‐cavity heat spreader.