Open Access645‐GHz InP heterojunction bipolar transistor harmonic oscillator
Author(s) -
Yun J.,
Kim J.,
Yoon D.,
Rieh J.S.
Publication year - 2017
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2017.2615
Subject(s) - bipolar junction transistor , optoelectronics , terahertz radiation , materials science , oscillation (cell signaling) , heterojunction bipolar transistor , signal (programming language) , vackář oscillator , local oscillator , electrical engineering , transistor , voltage controlled oscillator , radio frequency , voltage , engineering , computer science , chemistry , biochemistry , programming language
645‐GHz signal generation with a harmonic oscillator based on a 250‐nm InP heterojunction bipolar transistor technology is demonstrated. The oscillator is based on the common‐base cross‐coupled topology, generating a second harmonic signal through the push–push operation. The fabricated oscillator exhibits oscillation frequencies ranging from 561.5 to 645.1 GHz with bias variation. The measured peak output power is –17.4 dBm with a dc power dissipation of 49.3 mW (dc‐to‐RF efficiency of 0.04%). Additionally, terahertz imaging was successfully demonstrated with the developed oscillator employed as a signal source.