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Gate bias system for OTFT electrical characterisation and low‐frequency noise measurements
Author(s) -
Ciofi C.,
Scandurra G.,
Giusi G.
Publication year - 2017
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2017.2596
Subject(s) - noise (video) , materials science , infrasound , electrical engineering , optoelectronics , electronic engineering , transistor , voltage , mosfet , computer science , engineering , acoustics , physics , artificial intelligence , image (mathematics)
It is shown how some photovoltaic MOSFET drivers can be used for the realisation of a low noise, programmable voltage source, with a dynamic range that can easily exceed several tens of volts starting from standard ± 12 V power supplies. Such a source can be useful in the investigation of the electrical properties, and particularly noise properties, of organic thin film transistors on plastic substrates, since relatively large gate voltage sweeps are required in order to obtain a significant change in the conduction properties of the channel.

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