Open AccessHigh holding voltage SCRs with segmented layout for high‐robust ESD protection
Author(s) -
Huang Xiaozong,
Liu Zhiwei,
Liu Fan,
Liu Jizhi,
Song Wenqiang
Publication year - 2017
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2017.2390
Subject(s) - electrostatic discharge , computer science , voltage , electrical engineering , reliability engineering , engineering
Two high holding voltage silicon controlled rectifiers (SCRs) with segmented layout for high‐robust ESD protection are proposed, which are called SeSCR (segmented SCR) and anti‐SeSCR (anti‐segmented SCR), implemented in a 0.6 μm silicon on insulator (SOI) process. The transmission line pulse (TLP) characterisation results show that the holding voltage of the proposed structures can be elevated and adjusted with new layout topologies and different width of the segmentations for specific purposes. Meanwhile, the equivalent schematics and mechanisms of the segmented SCRs are also discussed.