Open AccessHydrogen gas sensor of Pd‐functionalised AlGaN/GaN heterostructure with high sensitivity and low‐power consumption
Author(s) -
Choi J.H.,
Jo M.G.,
Han S.W.,
Kim H.,
Kim S.H.,
Jang S.,
Kim J.S.,
Cha H.Y.
Publication year - 2017
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2017.2107
Subject(s) - heterojunction , materials science , hydrogen , sensitivity (control systems) , optoelectronics , power consumption , hydrogen sensor , wide bandgap semiconductor , voltage , atmospheric temperature range , gallium nitride , response time , power (physics) , analytical chemistry (journal) , electronic engineering , nanotechnology , electrical engineering , palladium , chemistry , catalysis , computer science , engineering , layer (electronics) , quantum mechanics , physics , organic chemistry , meteorology , computer graphics (images) , biochemistry , chromatography
A Pd‐functionalised hydrogen gas sensor based on an AlGaN/GaN heterostruture platform was investigated. The optimum bias voltage and reaction temperature were 0.1 V and 200°C, respectively, with which a wide range of hydrogen concentration from 0.1–4% in the air (i.e. 1000–40,000 ppm) was detectable. Not only low‐power consumption but also high sensitivity with fast response was achieved due to the excellent properties of the AlGaN/GaN heterostructure platform. The sensitivity was 72.8% with a response time of ∼3 s in 4% hydrogen concentration.
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