Open AccessSimple and accurate design of GaAs Schottky diode model
Author(s) -
Dou Jiangling,
Xu Jinping
Publication year - 2017
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2017.1578
Subject(s) - schottky diode , diode , schottky barrier , materials science , simple (philosophy) , optoelectronics , step recovery diode , gallium arsenide , electronic engineering , set (abstract data type) , metal–semiconductor junction , computer science , engineering , philosophy , epistemology , programming language
Three GaAs Schottky diodes with different junction configurations are modelled. The main contribution of this Letter is the simplification and accuracy of the diode model, in which approximate materials are set to be the same permittivity in the 3D diode model and only four parameters are required in modelling the non‐linear part of diode model. To validate the accuracy of the proposed models, one K band tripler and two W band triplers are designed and tested. The measured results agree well with the simulated results. It is envisaged that the method can be very useful for GaAs Schottky diode modelling.