Open AccessHighly reliable automotive integrated protection circuit for human body model ESD of +6 kV, over voltage, and reverse voltage
Author(s) -
Cho S.,
Lee D.,
Ali I.,
Kim S.,
Pu Y.,
Yoo S.,
Lee K.
Publication year - 2017
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2017.0780
Subject(s) - electrostatic discharge , human body model , voltage , automotive industry , reverse bias , electrical engineering , integrated circuit , engineering , automotive engineering , electronic engineering , materials science , aerospace engineering
In this Letter, a highly reliable automotive integrated protection circuit for human body model electrostatic discharge (ESD) of + 6 kV with an over voltage of 8.2–16 V and a reverse voltage of −16 to 0 V is presented. In the automotive application, the reliability of the electronic device is important. In order to increase the reliability, a protection circuit is proposed to preserve the chip from over or reverse voltage. In contrast to the conventional comparator‐based protection circuits, only MOSFET and resistors are applied in this Letter. Especially, at the reverse voltage protection mode, the potential zeroing method is applied to block the latch up and break down in the MOSFET. In addition, to protect the chip from static electricity, the ESD is combined with the protection circuit. This circuit is implemented on chip in a 0.18 µm CMOS technology and the area of the fabricated circuit is 680 × 330 µm. The proposed circuit is operated to protect the chip from external voltage between 8.2 and 16 V or between −16 and 0 V.