
High‐temperature electric contacts for AlGaInP/GaInP photon‐enhanced thermionic emission cathodes
Author(s) -
Girolami M.,
Bellucci A.,
Calvani P.,
Dimroth F.,
Trucchi D.M.
Publication year - 2017
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2017.0755
Subject(s) - thermionic emission , materials science , atmospheric temperature range , heterojunction , optoelectronics , cathode , electrical resistivity and conductivity , chemistry , electrical engineering , electron , physics , quantum mechanics , meteorology , engineering
Three metals (Ag, Au, and Ti) and a carbide (WC) were studied to verify their suitability to act as high‐temperature electric contacts for photon‐enhanced thermionic emission cathodes based on an AlGaInP/GaInP heterostructure. Transfer length method measurements, performed in the temperature range 25–350°C, showed that the lowest specific contact resistivity values were found for Au (4.0 × 10 −4 Ω cm −2 @350°C) and Ti (1.2 × 10 −3 Ω cm −2 @350°C). A further selection was made on the basis of film adhesion tests performed after the thermal cycles, in which Ti demonstrated an excellent mechanical robustness.