High‐temperature electric contacts for AlGaInP/GaInP photon‐enhanced thermionic emission cathodes | Zendy

Girolami M. | Zendy; Bellucci A. | Zendy; Calvani P. | Zendy; Dimroth F. | Zendy; Trucchi D.M. | Zendy

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High‐temperature electric contacts for AlGaInP/GaInP photon‐enhanced thermionic emission cathodes

Author(s) -

Girolami M.,

Bellucci A.,

Calvani P.,

Dimroth F.,

Trucchi D.M.

Publication year - 2017

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

ISSN - 1350-911X

DOI - 10.1049/el.2017.0755

Subject(s) - thermionic emission , materials science , atmospheric temperature range , heterojunction , optoelectronics , cathode , electrical resistivity and conductivity , chemistry , electrical engineering , electron , physics , quantum mechanics , meteorology , engineering

Three metals (Ag, Au, and Ti) and a carbide (WC) were studied to verify their suitability to act as high‐temperature electric contacts for photon‐enhanced thermionic emission cathodes based on an AlGaInP/GaInP heterostructure. Transfer length method measurements, performed in the temperature range 25–350°C, showed that the lowest specific contact resistivity values were found for Au (4.0 × 10 −4 Ω cm −2 @350°C) and Ti (1.2 × 10 −3 Ω cm −2 @350°C). A further selection was made on the basis of film adhesion tests performed after the thermal cycles, in which Ti demonstrated an excellent mechanical robustness.

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