Open AccessStable‐wavelength operation of europium‐doped GaN nanocolumn light‐emitting diodes grown by rf‐plasma‐assisted molecular beam epitaxy
Author(s) -
Sekiguchi H.,
Imanishi T.,
Matsuzaki R.,
Ozaki K.,
Yamane K.,
Okada H.,
Kishino K.,
Wakahara A.
Publication year - 2017
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2017.0447
Subject(s) - molecular beam epitaxy , materials science , optoelectronics , doping , light emitting diode , diode , europium , wavelength , substrate (aquarium) , plasma , luminescence , epitaxy , optics , nanotechnology , layer (electronics) , physics , quantum mechanics , oceanography , geology
For the first time, a rare‐earth‐doped GaN nanocolumn light‐emitting diode is fabricated on an n‐type (111) Si substrate, grown by rf‐plasma‐assisted molecular beam epitaxy. The nanocolumn structure remained in the n‐GaN and europium‐doped GaN active regions, but the lateral growth was enhanced in the p‐GaN region such that a continuous film was obtained. Clear diode characteristics and a sharp red luminescence with two dominant peaks at 620.3 and 633.8 nm were observed at room temperature. The shift in the wavelength with an increase in the injected current was <0.2 nm. Thus, this device has the potential for application as a stable‐wavelength optical device.