Open AccessSelf‐biasing memristor crossbar used for string matching and ternary content‐addressable memory implementation
Author(s) -
Yakopcic C.,
Bontupalli V.,
Hasan R.,
Mountain D.,
Taha T.M.
Publication year - 2017
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2017.0394
Subject(s) - crossbar switch , memristor , memistor , biasing , string (physics) , computer science , matching (statistics) , ternary operation , string searching algorithm , content addressable memory , voltage , throughput , topology (electrical circuits) , parallel computing , electronic engineering , pattern matching , resistive random access memory , electrical engineering , physics , mathematics , engineering , artificial neural network , artificial intelligence , quantum mechanics , telecommunications , statistics , wireless , programming language
A memristor crossbar‐based technique for highly parallel string matching is presented. An input string can be simultaneously compared against a bank of stored words, each having a different length, due to the self‐biasing nature of the crossbar circuit. This string matching system essentially acts as a ternary content‐addressable memory (TCAM). Owing to the high‐density nature of nanoscale memristor crossbars, this system can provide a significant area reduction when compared alternative TCAM designs while remaining competitive in terms of timing and energy.