z-logo
open-access-imgOpen Access
interview
Publication year - 2017
Publication title -
electronics letters
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2016.4693
Subject(s) - magnetoresistive random access memory , tunnel magnetoresistance , quantum tunnelling , materials science , condensed matter physics , magnetoresistance , time dependent gate oxide breakdown , ferromagnetism , reliability (semiconductor) , dielectric strength , dielectric , engineering physics , magnetic field , optoelectronics , electrical engineering , random access memory , engineering , physics , computer science , voltage , gate dielectric , power (physics) , transistor , quantum mechanics , computer hardware

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom