Open AccessTFET‐based well capacity adjustment in active pixel sensor for enhanced high dynamic range
Author(s) -
FernándezBerni J.,
Niemier M.,
Hu X.S.,
Lu H.,
Li W.,
Fay P.,
CarmonaGalán R.,
RodríguezVázquez Á.
Publication year - 2017
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2016.4548
Subject(s) - subthreshold conduction , transistor , dynamic range , noise (video) , electronic engineering , computer science , cmos , distortion (music) , high dynamic range , limiting , electrical engineering , field effect transistor , optoelectronics , voltage , engineering , materials science , artificial intelligence , amplifier , image (mathematics) , mechanical engineering
A tunnel field‐effect transistor (TFET)‐based pixel circuit for well capacity adjustment that does not require subthreshold operation on the part of the reset transistor is presented. In CMOS, this subthreshold operation leads to temporal noise, distortion and fixed pattern noise, becoming a primary limiting performance factor. In the proposed circuit, the asymmetric conduction associated with TFETs is exploited. This property, arising from the inherent physical structure of the device, provides the selective well adjustments during photo‐integration which are demanded for achieving high dynamic range. A GaN‐based heterojunction TFET has been designed according to the specific requirements for this application.