Open AccessLow‐phase noise Class‐C VCO with dynamic body bias
Author(s) -
Jang S.L.,
Wang J.J.
Publication year - 2017
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2016.4477
Subject(s) - voltage controlled oscillator , dbc , phase noise , electrical engineering , materials science , mosfet , figure of merit , voltage , transistor , optoelectronics , electronic engineering , engineering
A 2.5 GHz Class‐C voltage‐controlled oscillator (VCO) with dynamic back‐gate‐biased MOSFET is proposed. A dynamic gate biasing circuit is used to reduce power consumption by switching N‐type MOS from initial Class‐AB to Class‐C operation in steady state. Moreover, the VCO uses dynamic back‐gate bias to reduce threshold voltage of switching MOSFET during the start‐up oscillation. The Class‐C differential VCO is implemented in TSMC 0.18 μm bipolar‐complementary‐metal‐oxide‐semiconductor (BiCMOS) process. The measured phase noise is −124.8 dBc/Hz at 1 MHz offset frequency from 2.48 GHz carrier while consuming 2.64 mW power from a 0.8 V supply. Tuning range of VCO is 0.72 GHz, from 2.48 to 3.3 GHz, whereas the control voltage was tuned from 0 to 2 V. The VCO occupies a chip area of 446 × 840 μm 2 and provides a figure of merit of −197.55 dBc/Hz.