Open AccessInGaAs metamorphic laser (1064 nm) power converters with over 40% efficiency
Author(s) -
Kalyuzhnyy N.A.,
Mintairov S.A.,
Nadtochiy A.M.,
Nevedomskiy V.N.,
Rybalchenko D.V.,
Shvarts M.Z.
Publication year - 2017
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2016.4308
Subject(s) - converters , materials science , energy conversion efficiency , metalorganic vapour phase epitaxy , optoelectronics , laser , photovoltaic system , epitaxy , metamorphic rock , monochromatic color , gallium arsenide , power (physics) , optics , electrical engineering , nanotechnology , engineering , physics , layer (electronics) , quantum mechanics , geochemistry , geology
Grown by metalorganic vapour phase epitaxy (MOVPE) In x Ga 1− x As metamorphic laser power converters have been considered. Metamorphic buffer designs with high quality top layers have been developed. Photovoltaic converters with In 0.24 Ga 0.76 As photoactive area and optimised buffer have demonstrated efficiency 41.4% for 1064 nm monochromatic radiation conversion and ∼40% for laser power conversion.