Open AccessReal‐time current‐sensing feedback system for compensating process–voltage–temperature variations of display using double‐gate oxide TFT
Author(s) -
You BongHyun,
Lee JaeHoon,
Lee SooYeon,
Hong SeokHa,
Kim HyunChang,
Ju HaRam,
Choi MoonChul,
Jeong DeogKyoon
Publication year - 2017
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2016.3872
Subject(s) - thin film transistor , threshold voltage , materials science , transistor , gate oxide , shift register , voltage , process (computing) , degradation (telecommunications) , optoelectronics , overdrive voltage , biasing , electrical engineering , logic gate , electronic engineering , computer science , engineering , electronic circuit , layer (electronics) , nanotechnology , operating system
The shift register of display panel employing double‐gate oxide thin‐film transistors (TFTs) to compensate the severe degradation of the threshold voltage ( V TH ) is proposed. In double‐gate TFTs, V TH is controlled by adjusting top‐gate bias, so that V TH degradation can be stabilised by top‐gate bias control. However, an optimum top‐gate voltage varies from product to product due to process–voltage–temperature variation. To overcome this variation, a feedback system is designed and fabricated in a 0.18 μm BCDMOS process. The system consists of the shift register current sensing and the searching algorithm for finding optimal top‐gate bias of double‐gate TFTs. It is verified that proposed system successfully stabilised the operation of the shift register up to 80°C.