Open AccessDesign of D‐band frequency doubler with compact power combiner
Author(s) -
Dou Jiangling,
Jiang Shu,
Xu Jinping,
Wang Wenbo
Publication year - 2017
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2016.3788
Subject(s) - frequency multiplier , voltage doubler , schottky diode , multi band device , electrical engineering , microwave , power (physics) , dbm , monolithic microwave integrated circuit , electronic engineering , engineering , voltage , physics , cmos , diode , telecommunications , voltage reference , amplifier , quantum mechanics , antenna (radio) , dropout voltage
The design and results of a D‐band frequency doubler using two parallelly mounted Schottky dual‐diode chips are presented, which is considered as a unit in the doubler design. The doubler features four Schottky anodes closely located at a compact region, being no need for additional power dividing and combining circuit. The purpose is to verify the feasibility of a simple and compact hybrid microwave integrated circuit (HMIC) circuitry for frequency doubling with a higher power‐handling capability in this band, and an effective fast method for designing the matching networks of the doubler. With an input driving power of about 20 dBm at the E‐band and bias voltage of 0 V, it delivers an output power of 6 ± 1 dBm across the band of 140–152 GHz and 2–4.7 dBm over the bands of 152–160 and 135–140 GHz.