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Fundamental transverse mode operation of a type‐II vertical‐external‐cavity surface‐emitting laser at 1.2 µm
Author(s) -
Möller C.,
Zhang F.,
Fuchs C.,
Berger C.,
Rehn A.,
Ruiz Perez A.,
RahimiIman A.,
Hader J.,
Koch M.,
Moloney J.V.,
Koch S.W.,
Stolz W.
Publication year - 2017
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2016.3732
Subject(s) - laser , transverse mode , optics , transverse plane , mode (computer interface) , materials science , optoelectronics , vertical cavity surface emitting laser , semiconductor laser theory , surface (topology) , physics , engineering , computer science , geometry , mathematics , structural engineering , operating system
The modal properties of a novel vertical‐external‐cavity surface‐emitting laser with (GaIn)As/Ga(AsSb)/(GaIn)As type‐II quantum wells are analysed. The device, emitting at a wavelength around 1175 nm, is operated in TEM 00 mode and optimised for a high beam quality. The M 2 factors are measured at various pump powers. An excellent beam quality is observed for up to 350 mW with an M 2 < 1.2.

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