Open AccessExperimental investigation of multi‐path and metal‐stacking structure for 8‐shape on‐chip inductors on standard CMOS
Author(s) -
Zou Wanghui,
Chen Diping,
Peng Wei,
Zeng Yun
Publication year - 2016
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2016.3442
Subject(s) - inductor , stacking , cmos , q factor , materials science , chip , quality (philosophy) , electronic circuit , electronic engineering , path (computing) , optoelectronics , electrical engineering , engineering , computer science , physics , nuclear magnetic resonance , voltage , programming language , resonator , quantum mechanics
An experimental investigation reports on the effectiveness of multi‐path and metal‐stacking structure in regard to quality factor improvement for on‐chip 8‐shaped inductors on standard CMOS process. It is found that the multi‐path structure has little positive impact on the 8‐shaped inductors, while the metal‐stacking structure improves quality factor significantly. For a 0.5 nH 8‐shaped inductor with top two layers metal‐stacking, a good differential quality factor of ∼15 at 10 GHz and ∼17 at 13 GHz is obtained, which makes the inductor suitable for the design of low‐cost and interference‐immune over‐10 GHz radio‐frequency and high‐speed integrated circuits.