Open AccessHigh‐frequency InGaAs tri‐gate MOSFETs with f max of 400 GHz
Author(s) -
Zota C.B.,
Lindelöw F.,
Wernersson L.E.,
Lind E.
Publication year - 2016
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2016.3108
Subject(s) - nanowire , materials science , optoelectronics , mosfet , field effect transistor , transistor , metal gate , gate oxide , electrical engineering , engineering , voltage
Extremely scaled down tri‐gate RF metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) utilising lateral nanowires as the channel, with gate length and nanowire width both of 20 nm are reported. These devices exhibit simultaneous extrapolated f t and f max of 275 and 400 GHz at V DS = 0.5 V, which is the largest combined f t and f max , as well as the largest f max reported for all III–V MOSFETs.