Open Access100 Gb/s and 2 V V π InP Mach‐Zehnder modulator with an n‐i‐p‐n heterostructure
Author(s) -
Ogiso Y.,
Ozaki J.,
Kashio N.,
Kikuchi N.,
Tanobe H.,
Ohiso Y.,
Kohtoku M.
Publication year - 2016
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2016.2987
Subject(s) - extinction ratio , heterojunction , electro optic modulator , materials science , optoelectronics , modulation (music) , optical modulator , optics , mach–zehnder interferometer , physics , phase modulation , interferometry , wavelength , phase noise , acoustics
An ultra‐high bandwidth (BW) and a low V π InP Mach‐Zehnder modulator with an n‐i‐p‐n heterostructure is proposed. The combination of the n‐i‐p‐n heterostructure and the capacitive‐loaded travelling‐wave electrode provides a modulator with extremely low electrical loss. The device exhibits a 3 dB electro‐optic BW of over 67 GHz and a V π of 2.0 V. A 100 Gb/s non‐return‐to‐zero on–off keying modulation with an extinction ratio of over 10 dB is also realised.