Open AccessRobust fuzzy SRAM for accurate and ultra‐low‐power MVL and fuzzy logic applications
Author(s) -
Moonesan M.,
Faghih Mirzaee R.,
Sam Daliri M.,
Navi K.
Publication year - 2016
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2016.2932
Subject(s) - fuzzy logic , static random access memory , computer science , power (physics) , electronic engineering , ultra low power , mathematics , algorithm , artificial intelligence , engineering , power consumption , physics , quantum mechanics
A fuzzy static RAM (SRAM) is proposed, which is applicable in fuzzy logic and many multiple‐valued logic (MVL) applications. The new structure is basically an extension to the binary SRAM cell. Two cross‐coupled voltage mirror circuits are used to be able to hold an arbitrary voltage value. The proposed design forms a robust and reliable structure, which is capable of operating with more than 95% accuracy in spite of imperfect fabrication of carbon nanotube FETs. Another exceptional advantage is its ultra‐low‐power consumption in MVL environments. It consumes 38.7 and 99% less static power compared with the SRAMs with regular ternary and quaternary components, respectively.