Open AccessPrintable ReRAM devices based on the non‐stoichiometric junction CuS/Cu 2− x S
Author(s) -
Congiu M.,
Albano L.G.S.,
NunesNeto O.,
Graeff C.F.O.
Publication year - 2016
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2016.2901
Subject(s) - resistive random access memory , materials science , stoichiometry , optoelectronics , copper , nanocrystal , diffusion , thin film , resistive touchscreen , ionic bonding , voltage , voltage drop , nanotechnology , electrical engineering , ion , chemistry , metallurgy , physics , organic chemistry , thermodynamics , engineering
Hereby a novel thin film‐based configuration of redox resistive switching memory (ReRAM) based on cheap and abundant copper sulphide (CuS) is reported. The devices working mechanism is based on the junction of two layers of CuS stacked nanocrystal with different stoichiometry (CuS and Cu 2− x S). CuS thin films were deposited using a fast, easy and low‐temperature drop‐casting technique. The devices shown memresistive characteristics, with well‐defined ON and OFF resistance states, inducible by voltage pulses. A polynomial model has been proposed to characterise the devices considering both space‐charge‐limited current and ionic diffusion.