Open AccessElectrical injection type‐II (GaIn)As/Ga(AsSb)/(GaIn)As single ‘W’‐quantum well laser at 1.2 µm
Author(s) -
Fuchs C.,
Berger C.,
Möller C.,
Weseloh M.,
Reinhard S.,
Hader J.,
Moloney J.V.,
Koch S.W.,
Stolz W.
Publication year - 2016
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2016.2851
Subject(s) - electroluminescence , quantum well , materials science , laser , optoelectronics , differential gain , current density , wavelength , metalorganic vapour phase epitaxy , semiconductor laser theory , optics , semiconductor , epitaxy , physics , layer (electronics) , quantum mechanics , composite material
Highly efficient interface‐dominated electrical injection lasers in the near‐infrared regime based on the type‐II band alignment in (GaIn)As/Ga(AsSb)/(GaIn)As single ‘W’‐quantum wells are realised. The structure is designed by applying a fully microscopic theory, grown by metal organic vapour phase epitaxy, and characterised using electroluminescence measurements and broad‐area laser studies. A characteristic blue shift of 93 meV/(kA/cm 2 ) with increasing charge carrier density is observed and compared with theoretical investigations. Low threshold current densities of 0.4 kA/cm 2 , high differential efficiencies of 66%, optical output powers of 1.4 W per facet, and internal losses of only 1.9 cm −1 are observed at a wavelength of 1164 nm for a cavity length of 930 µm. For a cavity length of 2070 µm, the threshold current density is reduced to 0.1 kA/cm 2 . No indication for type‐I related transitions for current densities up to 4.6 kA/cm 2 is observed.