Accurate dry etching technique for germanium waveguide by using CHF 3  based inductively coupled plasma | Zendy

Idris A.S. | Zendy; Jiang H. | Zendy; Hamamoto K. | Zendy

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Accurate dry etching technique for germanium waveguide by using CHF 3 based inductively coupled plasma

Author(s) -

Idris A.S.,

Jiang H.,

Hamamoto K.

Publication year - 2016

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

eISSN - 1350-911X

pISSN - 0013-5194

DOI - 10.1049/el.2016.2846

Subject(s) - photoresist , dry etching , etching (microfabrication) , inductively coupled plasma , materials science , reactive ion etching , selectivity , germanium , plasma , analytical chemistry (journal) , plasma etching , resist , optoelectronics , chemistry , nanotechnology , silicon , chromatography , biochemistry , physics , layer (electronics) , quantum mechanics , catalysis

A CHF 3 inductively coupled plasma (ICP) based dry etching method is proposed for accurate etching of Ge waveguides. CHF 3 ICP based dry etching produces excellent anisotropy along with good selectivity with regards to regular polymeric photoresist, which leads to the elimination of under‐cut. As a result, an almost vertical sidewall angle of 85° with an etching rate of 190 nm/min was realised with a relatively high selectivity ratio of 5:1 against regular photoresist.

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