Open AccessAccurate dry etching technique for germanium waveguide by using CHF 3 based inductively coupled plasma
Author(s) -
Idris A.S.,
Jiang H.,
Hamamoto K.
Publication year - 2016
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2016.2846
Subject(s) - photoresist , dry etching , etching (microfabrication) , inductively coupled plasma , materials science , reactive ion etching , selectivity , germanium , plasma , analytical chemistry (journal) , plasma etching , resist , optoelectronics , chemistry , nanotechnology , silicon , chromatography , biochemistry , physics , layer (electronics) , quantum mechanics , catalysis
A CHF 3 inductively coupled plasma (ICP) based dry etching method is proposed for accurate etching of Ge waveguides. CHF 3 ICP based dry etching produces excellent anisotropy along with good selectivity with regards to regular polymeric photoresist, which leads to the elimination of under‐cut. As a result, an almost vertical sidewall angle of 85° with an etching rate of 190 nm/min was realised with a relatively high selectivity ratio of 5:1 against regular photoresist.