Open AccessHigh‐power single‐chip GaN‐based white LED with 3058 lm
Author(s) -
Ding Mingdi,
Zhang Yibin,
Xu Jianwei,
Zhao Desheng,
Huang Hongjuan,
Xu Xin,
Miao Zhenlin,
He Peng,
Wang Yanming,
Dong Yongjun,
Zhang Baoshun,
Cai Yong
Publication year - 2016
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2016.2789
Subject(s) - materials science , chip , phosphor , luminous flux , yttrium , optoelectronics , cerium , aluminium , optics , electrical engineering , metallurgy , engineering , physics , light source , oxide
A high‐power phosphor‐converted white LED with 3058 lm is reported. The high‐power white LED was manufactured by utilising a single‐blue LED chip with a cerium‐doped yttrium aluminium garnet phosphor crystal film, and the LED chip consists of 16 LED cells that are connected in series, the chip dimensions are of 4.5 × 4.5 mm 2 . The electrical and optical characteristics of the LED were measured up to a 500 mA injection current under direct operation conditions. Results show that the luminous flux and luminous efficacy at 500 mA reach to 3058 lm and 128 lm/W, respectively.