High‐power single‐chip GaN‐based white LED with 3058 lm | Zendy

Ding Mingdi | Zendy; Zhang Yibin | Zendy; Xu Jianwei | Zendy; Zhao Desheng | Zendy; Huang Hongjuan | Zendy; Xu Xin | Zendy; Miao Zhenlin | Zendy; He Peng | Zendy; Wang Yanming | Zendy; Dong Yongjun | Zendy; Zhang Baoshun | Zendy; Cai Yong | Zendy

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High‐power single‐chip GaN‐based white LED with 3058 lm

Author(s) -

Ding Mingdi,

Zhang Yibin,

Xu Jianwei,

Zhao Desheng,

Huang Hongjuan,

Xu Xin,

Miao Zhenlin,

He Peng,

Wang Yanming,

Dong Yongjun,

Zhang Baoshun,

Cai Yong

Publication year - 2016

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

ISSN - 1350-911X

DOI - 10.1049/el.2016.2789

Subject(s) - materials science , chip , phosphor , luminous flux , yttrium , optoelectronics , cerium , aluminium , optics , electrical engineering , metallurgy , engineering , physics , light source , oxide

A high‐power phosphor‐converted white LED with 3058 lm is reported. The high‐power white LED was manufactured by utilising a single‐blue LED chip with a cerium‐doped yttrium aluminium garnet phosphor crystal film, and the LED chip consists of 16 LED cells that are connected in series, the chip dimensions are of 4.5 × 4.5 mm 2 . The electrical and optical characteristics of the LED were measured up to a 500 mA injection current under direct operation conditions. Results show that the luminous flux and luminous efficacy at 500 mA reach to 3058 lm and 128 lm/W, respectively.

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