Open AccessRecessed‐channel reconfigurable field‐effect transistor
Author(s) -
Kim S.,
Kim S.W.
Publication year - 2016
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2016.2401
Subject(s) - transistor , drain induced barrier lowering , optoelectronics , materials science , quantum tunnelling , schottky barrier , field effect transistor , thermionic emission , channel (broadcasting) , electrical engineering , voltage , channel length modulation , physics , engineering , electron , diode , quantum mechanics
A new reconfigurable field‐effect transistor (RFET) named as recessed‐channel RFET (RC‐RFET) is introduced herein to improve scalability, current drivability and subthreshold swing ( S ). There are two distinct features which allow RC‐RFET to show enhanced performance than conventional RFET. First, a novel structure based RC and stacked gates increases effective channel length which results in suppressed short‐channel‐effect without any integration density penalty. Second, the switching mechanism of RC‐RFET (thermionic emission) differs from that of conventional RFET (Schottky barrier tunnelling). It enables RC‐RFET to overcome the fundamental limit of S degradation as a function of gate voltage and promises higher ON–OFF current ratio ( I ON / I OFF ) and its low‐power applications. As a result, the RC‐RFET shows I ON / I OFF higher than 10 7 , small drain induced barrier lowering about 15 mV/V and ideal S (∼63 mV/decade) for 50 nm gate length.